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MBR1H100SFT3G Surface Mount Schottky Power Rectifier
Plastic SOD-123FL Package
This device uses the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection, and "Oring" of multiple supply voltages and any other application where performance and size are critical.
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SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 100 VOLTS
* * * * * * * * * * * * * * *
Guardring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature Epoxy Meets UL 94 V-0 Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C Human Body Model, 3B This is a Pb-Free Device
SOD-123FL CASE 498 PLASTIC
MARKING DIAGRAM
Mechanical Characteristics
Reel Options: MBR1H100SFT3G = 10,000 per 13 in reel/8 mm tape Device Marking: L1H Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Device Meets MSL 1 Requirements
L1HMG G L1H = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping 10000/Tape & Reel
MBR1H100SFT3G SOD-123 (Pb-Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2009
April, 2009 - Rev. 0
1
Publication Order Number: MBR1H100SF/D
MBR1H100SFT3G
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 162C) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) Symbol VRRM VRWM VR IO IFSM Tstg, TJ Value 100 Unit V
1.0 50 -65 to +175
A A C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Lead (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Thermal Resistance, Junction-to-Ambient (Note 3) Symbol YJCL RqJA RqJA Value 23 85 330 Unit C/W C/W C/W
ELECTRICAL CHARACTERISTICS
Characteristic Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25C) (IF = 2.0 A, TJ = 25C) (IF = 1.0 A, TJ = 125C) (IF = 2.0 A, TJ = 125C) Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 125C) 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%. Symbol VF Value 0.76 0.84 0.61 0.68 40 0.5 Unit V
IR
mA mA
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MBR1H100SFT3G
TYPICAL CHARACTERISTICS
100 IF, FORWARD CURRENT (A) 150C 125C 25C 10 IF, FORWARD CURRENT (A) 100 150C 125C 25C 10
1
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
10 IR, REVERSE CURRENT (mA) IR, REVERSE CURRENT (mA) 1 0.1 0.01 0.001 0.0001 25C 0 10 20 30 40 50 60 70 80 90 150C
10 1 0.1 0.01 25C 0.001 150C
125C
125C
0.0001
0.00001
0.00001 0 100
10
20
30
40
50
60
70
80
90 100
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
IF(AV), AVERAGE FORWARD CURRENT (A)
dc 1.5 Square Wave 1.0
RqJL = 23C/W
PFO, AVERAGE POWER DISSIPATION (W)
2.0
1.0 TJ = 175C 0.8 dc 0.6 0.4 0.2 0 Square Wave
0.5
0 135
140
145
150
155
160
165
170
175
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
TL, LEAD TEMPERATURE (C)
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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MBR1H100SFT3G
TYPICAL CHARACTERISTICS
140 120 C, CAPACITANCE (pF) 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 TJ = 25C
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance
1000 50% (DUTY CYCLE) 25% 10% 5.0% 2.0% 1.0% 1.0
100 R(t) (C/W)
10
0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (s) 0.1 1.0 10 100 1000
Figure 8. Thermal Response, Junction-to-Ambient (20 mm2 pad)
100 50% (DUTY CYCLE) 25% 10 R(t) (C/W) 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (s) 0.1 1.0 10 100 1000
Figure 9. Thermal Response, Junction-to-Ambient (1 in2 pad)
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MBR1H100SFT3G
PACKAGE DIMENSIONS
SOD-123LF CASE 498-01 ISSUE A
E q
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. DIM A A1 b c D E L HE q MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0 MILLIMETERS NOM MAX 0.95 1.00 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8 - MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0 INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 - MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8
D A1 A
POLARITY INDICATOR OPTIONAL AS NEEDED
L
b
SOLDERING FOOTPRINT*
HE 0.91 0.036
q
c
2.36 0.093 4.19 0.165
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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5
EEE EEE EEE
SCALE 10:1
EE EE EE
1.22 0.048
mm inches
MBR1H100SF/D

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